IGBT Full name: Insulated Gate Bipolar Transistor
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Author:pmo646c82
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Published time: 2019-06-24
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Features: High voltage withstand, low on-off voltage, fast switching speed
IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect transistor), which has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. The saturation voltage of GTR decreases, the current density is high, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large and the current density is small. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for converter systems with DC voltage of 600 V or more, such as AC motor, frequency converter, switching power supply, lighting circuit, traction drive and other fields. IGBT module is a modular semiconductor product, which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (continuous current diode chip) through a specific circuit bridge. The packaged IGBT module is directly applied to frequency converter, UPS uninterruptible power supply and other devices. IGBT module has the characteristics of energy saving, easy installation and maintenance, stable heat dissipation, etc. At present, most of the products sold in the market are modular products, commonly referred to as IGBT module. With the advancement of the concept of energy saving and environmental protection, such products will become more and more popular in the market. IGBT is the core component of energy conversion and transmission, commonly known as "CPU" of power electronic devices. As a strategic emerging industry, IGBT is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.
